Here is a summary of the expected number of Erase/Write cycles that can be expected from NAND Flash Memory from the Enterprise Storage Forum:
Please note that there are 3 cell type mentioned below: SLC, MLC and TLC
SLC = Single Level Cell. This the case that a cell has only two states -- zero or one. These are the early memory cards, and they were very rugged. But capacity and speed are low.
MLC = Multi Level Cell. This case allows each cell to store 2^2 states which is 4 levels. This means that the internal comparators have to be able to resolve Vdd/4 increments. If a part is working at 1.8V, then we would have 4 regions for the cell to output it's level. That would be 0 to < 0.45V, 0.45V to < 0.9V, 0.9V to < 1.35V, and 1.35V to 1.8V. This means that one cell contains 4 possible states and we could call them 00, 01, 10, and 11 -- two bits per cell.
TLC - Triple Level Cell and this time it is 2^3 = 8 states, meaning that it can store 000, 001, 010, 011, 100, 101, 110, 111 or 3 bits of data per cell.
To make this even more challenging, each generation becomes faster, and the data stored in each cell has to be 8 repeatable distributions as a shift in level would make it read a different group of 3 bits.
Note also that they mention the number of Write Cyles. Understand that in order to do a write cycle, a block needs to be erased first, thus Write Cycle = Erase Cycle / Write Cycle.
https://www.enterprisestorageforum.com/hardware/ssd-lifespan-how-long-will-your-ssd-work/How SSD/Flash Endurance is Measured
The endurance rating of NAND flash SSDs is expressed in write cycles. They have a limited number of write cycles, after which the oxide layer of the flash memory cells starts degrading. This impacts the performance of the SSD.
The endurance rate is also called the program/erase cycle, or P/E cycle. When new data is stored in the SSD, an existing data block must be erased electrically. Unfortunately, a continuous P/E cycle deteriorates the oxide layer of the NAND flash memory cells. Thus, these cells eventually wear out, which affects their data-storing capacity.
Another undesirable phenomenon that affects SSD performance is write amplification. When writing data into the storage drive, the actual amount of the write gets multiplied. This increases the number of writes and thus shortens the reliable operation time of the SSD, crashing its consistency. Different factors affecting the write amplification are garbage collection, over-provisioning, metadata, log structures, and de-duplication.
You will find key differences in the flash endurance of single-level cell (SLC), multi-level cell (MLC), and triple-level cell (TLC) architecture:
SLC NAND flash can endure around 50,000 to 1,00,000 write cycles.
MLC NAND flash can sustain up to 3,000 write cycles. eMLC or enterprise MLC version supports about 10,000 write cycles.
TLC NAND Flash has low endurance and can take about 300 to 1,000 write cycles.
Note: There are others papers that specify different numbers max write cycles.